High performance SiC field effect transistor: UF3C065030K3S
UnitedSiC UF3C065030K3S is a third-generation silicon-carbon (SiC) MOSFET produced by United Silicon Carbide (UnitedSiC). The device uses SiC material, which has higher switching speed, high temperature resistance and lower conduction loss compared to traditional silicon (Si)-based materials. Therefore, SiC MOSFET is very suitable for high-power, high-frequency and high-efficiency power electronics applications.
UF3C065030K3S Description
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-247-3L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads when used with recommended RC-snubbers, and any application requiring standard gate drive.
Features
Typical on-resistance RDS(on),typ of 27mW
Maximum operating temperature of 175°C
Excellent reverse recovery
Low gate charge
Low intrinsic capacitance
ESD protected, HBM class 2
Very low switching losses (required RC-snubber loss negligible under typical operating conditions)
| Parameter | Specification |
|---|---|
| Drain - Source Voltage (VDS) | Max 650V |
| Continuous Drain Current (Inner Diameter) | Up to 85A |
| On - Resistance (RDS(on)) at 25°C | Typical 27mΩ |
| Max Junction Temperature (Tj) | 175°C |
| Package Type | TO - 247 - 3L |
| Gate Charge | Ultra - low, which can reduce switching losses and increase switching speed, and has relatively low requirements for drive circuits |
| Reverse Recovery Characteristics | Fast recovery time and low reverse recovery current during reverse recovery, reducing reverse recovery losses and improving circuit efficiency |
| Intrinsic Capacitance | Low, helping to increase switching frequency, reduce the Miller effect during switching, and thus improve switching stability and reliability |
| ESD Protection | Complies with HBM Level 2 standard, effectively preventing damage to the device caused by electrostatic discharge |
UF3C065030K3S PDF Datasheet
Typical applications
EV charging
PV inverters
Switch mode power supplies
Power factor correction modules w Motor drives
Induction heating
Advantages compared to silicon MOSFET:
High-frequency performance: SiC MOSFETs have significant high-frequency switching capabilities and can support higher switching frequencies.
Low conduction loss: Compared with traditional silicon MOSFETs, SiC MOSFETs have lower conduction resistance, reducing losses during the switching process.
High temperature adaptability: SiC materials have better thermal stability and are suitable for high temperature environments, especially in applications with higher power density, which can provide better heat dissipation performance.
High voltage resistance: SiC MOSFETs generally have stronger voltage resistance than silicon MOSFETs and are suitable for higher voltage power electronic systems.
Summarize:
UF3C065030K3S is a 650V, 30A SiC MOSFET suitable for power electronics applications requiring high efficiency, high switching frequency and high temperature resistance, such as electric vehicles, power inverters and industrial power systems. It provides lower conduction losses and higher switching performance than traditional silicon MOSFETs, helping to improve overall system efficiency and operating stably in high-temperature environments. It is one of the indispensable key components in modern power electronic systems.
High performance SiC field effect transistor: UF3C065030K3S
UnitedSiC UF3C065030K3S is a third-generation silicon-carbon (SiC) MOSFET produced by United Silicon Carbide (UnitedSiC). The device uses SiC material, which has higher switching speed, high temperature resistance and lower conduction loss compared to traditional silicon (Si)-based materials. Therefore, SiC MOSFET is very suitable for high-power, high-frequency and high-efficiency power electronics applications.
UF3C065030K3S Description
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-247-3L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads when used with recommended RC-snubbers, and any application requiring standard gate drive.
Features
Typical on-resistance RDS(on),typ of 27mW
Maximum operating temperature of 175°C
Excellent reverse recovery
Low gate charge
Low intrinsic capacitance
ESD protected, HBM class 2
Very low switching losses (required RC-snubber loss negligible under typical operating conditions)
| Parameter | Specification |
|---|---|
| Drain - Source Voltage (VDS) | Max 650V |
| Continuous Drain Current (Inner Diameter) | Up to 85A |
| On - Resistance (RDS(on)) at 25°C | Typical 27mΩ |
| Max Junction Temperature (Tj) | 175°C |
| Package Type | TO - 247 - 3L |
| Gate Charge | Ultra - low, which can reduce switching losses and increase switching speed, and has relatively low requirements for drive circuits |
| Reverse Recovery Characteristics | Fast recovery time and low reverse recovery current during reverse recovery, reducing reverse recovery losses and improving circuit efficiency |
| Intrinsic Capacitance | Low, helping to increase switching frequency, reduce the Miller effect during switching, and thus improve switching stability and reliability |
| ESD Protection | Complies with HBM Level 2 standard, effectively preventing damage to the device caused by electrostatic discharge |
UF3C065030K3S PDF Datasheet
Typical applications
EV charging
PV inverters
Switch mode power supplies
Power factor correction modules w Motor drives
Induction heating
Advantages compared to silicon MOSFET:
High-frequency performance: SiC MOSFETs have significant high-frequency switching capabilities and can support higher switching frequencies.
Low conduction loss: Compared with traditional silicon MOSFETs, SiC MOSFETs have lower conduction resistance, reducing losses during the switching process.
High temperature adaptability: SiC materials have better thermal stability and are suitable for high temperature environments, especially in applications with higher power density, which can provide better heat dissipation performance.
High voltage resistance: SiC MOSFETs generally have stronger voltage resistance than silicon MOSFETs and are suitable for higher voltage power electronic systems.
Summarize:
UF3C065030K3S is a 650V, 30A SiC MOSFET suitable for power electronics applications requiring high efficiency, high switching frequency and high temperature resistance, such as electric vehicles, power inverters and industrial power systems. It provides lower conduction losses and higher switching performance than traditional silicon MOSFETs, helping to improve overall system efficiency and operating stably in high-temperature environments. It is one of the indispensable key components in modern power electronic systems.
UnitedSiC
En stock : 5562
